SSM6N36TU,LF parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Toshiba

Model:

SSM6N36TU,LF

Description:

SMALL SIGNAL MOSFET N-CH X 2 VDS

Stock:

3063

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.07

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Parameters

Current at 25 ° C - continuous drain (Id)

500mA(Ta)

Drain source voltage (Vdss)

20V

FET Type

2 N-channels(two)

FET function

Logic level gate,1.5V drive

Gate charge (Qg) at different Vgs (maximum)

1.23nC @ 4V

Input capacitance at different Vds (Ciss) (maximum)

46pF @ 10V

On resistance (maximum) for different Ids and Vgs

630 mΩ @ 200mA,5V

Power - maximum

500mW(Ta)

Vgs (th) (maximum) for different Ids

1V @ 1mA

packing

TR,CT

series

working temperature

150°C

Encapsulation/Housing

6-SMD,feedthrough

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

SSM6N36TU,LF（FET, MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory3063,Price reference "real-time change" China/Hongkong。 SSM6N36TU,LF package/specs, Download SSM6N36TU,LF、Datasheet。